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Use of Schottky-diode collectors for SEM determination of bulk diffusion lengths
49
Citations
12
References
1974
Year
Wide-bandgap SemiconductorElectrical EngineeringEngineeringCross SectionsPhysicsDiffusion ResistanceNanoelectronicsBulk Diffusion LengthsApplied PhysicsTransport PhenomenaElectron MicroscopeSchottky-diode CollectorsMicroelectronicsCompound SemiconductorSchottky DiodesCategoryiii-v SemiconductorSemiconductor DeviceSem Determination
Schottky diodes were used as collectors in the determination of bulk hole diffusion lengths (Lhn) by means of a scanning electron microscope in the beam-induced current mode. The scans were performed on cross sections obtained by cleavage along a plane perpendicular to the metal layer. For n-type GaP this technique yields excellent results.
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