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THE FIELD-EFFECT INTERFACE CONDUCTANCE IN Ge—GaAs <i>n-n</i> HETEROJUNCTIONS
17
Citations
3
References
1964
Year
SemiconductorsSemiconductor TechnologyEngineeringJournal Citation ReportPhysicsApplied PhysicsBibliometricsScience And Technology StudiesCitation AnalysisJ. HeerJanuary 1964W. E. HowardSemiconductor Device
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation L. Esaki, W. E. Howard, J. Heer; THE FIELD‐EFFECT INTERFACE CONDUCTANCE IN Ge—GaAs n‐n HETEROJUNCTIONS. Appl. Phys. Lett. 1 January 1964; 4 (1): 3–4. https://doi.org/10.1063/1.1723579 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search
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