Applied Physics Letters · 1984 · 29 citations · 7 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSurface ScienceElectron MicroscopyEpitaxial GrowthSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSemiconductor Thin FilmsEpitaxial Film GrowthGrowth RatesMolecular Beam EpitaxyReflection High-energy Electron DiffractionScanning Electron MicroscopyScanning Electron Microscopy Surface AnalysisSemiconductor CharacterizationSurface States
Single crystal ZnSe films have been grown on (100) orientated GaAs by molecular beam epitaxy (MBE) from a single Knudsen oven containing ZnSe compound material. The ZnSe Knudsen oven temperatures required to provide reasonable growth rates (0.15–0.33 μm/h) are in the range 950–1000 °C. ZnSe films grown at substrate temperatures around 350 °C have extremely smooth surfaces, as indicated by both reflection high-energy electron diffraction and scanning electron microscope observations. We report for the first time the observation of (1×3) surface reconstruction on ZnSe grown by MBE at substrate temperatures ≥470 °C.
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High-quality ZnSe thin films grown by molecular beam epitaxy
Takafumi Yao, Mutsuo Ogura, Seiji Matsuoka et al. · Applied Physics Letters · 1983 · 78 citations
Natural Sciences, Materials Engineering, Materials Science +17