P‐4: Electro Static Discharge Effects on Polysilicon TFTs for AMLCD

Abstract

Abstract We have investigated the degradation and failure of poly‐Si thin film transistors (TFT) due to electro static discharge (ESD) stress by using transmission line pulser (TLP) test. Experimental results show that degradations caused by ESD stress on the drain pad are classified into three failure modes depending on the strength of ESD stress;degradation regime, partial failure regime and complete failure regime. DC stress test has been performed to compare with the ESD stress test.