Photoelectric phenomena in metal-insulator-semiconductor structures at low electric fields in the insulator

Abstract

Numerous photoelectric methods were used to determine parameters of metal-insulator-semiconductor (MIS) structures. A model of photoelectric phenomena taking place in MIS structures, at low electric fields in the dielectric, was found to be necessary to explain results of some of the experiments. Such a model has been worked out and is presented for the practically important case of zero net photoelectric current (J=0). Formulas are derived allowing calculation of MIS structure photoelectric characteristics. These characteristics have also been determined experimentally and are presented in comparison with the calculated ones. Good agreement between the measured and calculated characteristics supports the validity of the analysis presented. This analysis, together with the analysis for the case of nonzero net photoelectric current (J≠0), which will be presented separately, creates a basis for development of a new family of photoelectric MIS structure measurement methods.