Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers

Abstract

Crescent-shaped tensile-strained GaAsP/AlGaAs quantum wire-like lasers are fabricated on V-grooved GaAs(100) substrates by metalorganic vapor phase epitaxy. Light-output versus current characteristics, polarized lasing spectra and near-field patterns show lasing from the quantum wires in the TM mode. The threshold current density per wire is as low as 500 A/cm 2 and the lasing wavelength is 780 nm.