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Element specific investigations of the structural and magnetic properties of Gd:GaN
50
Citations
6
References
2007
Year
Wide-bandgap SemiconductorMagnetic PropertiesEngineeringMagnetic ResonanceSynchrotron Radiation SourceMagnetismGd Dopant AtomMagnetic ContributionsPhysicsAluminum Gallium NitrideGallium OxideElement Specific InvestigationsCategoryiii-v SemiconductorCrystallographySpintronicsX-ray DiffractionApplied PhysicsCondensed Matter PhysicsGan Power DeviceGd Dopant Atoms
The authors present element specific measurements of the x-ray linear dichroism and the x-ray magnetic circular dichroism (XMCD) on Gd:GaN samples. They can show that the majority of the Gd dopant atoms goes to substitutional Ga sites and that a small XMCD is detectable for Gd. There are significant deviations of the magnetic hysteresis recorded for Gd compared to superconducting quantum interference device measurements. Our measurements show that the magnetic signal from the Gd dopant atom itself is rather small highlighting the role of magnetic contributions of the GaN host crystal.
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