Single-beam overwriting with melt-erasing process in an InSbTe phase-change optical disk

Abstract

Single-beam overwriting with melt-erasing process was made in a 5.25-in.-diam phase-change optical disk using an In22Sb37Te41 recording film. In the overwriting between 2 and 3 MHz signals at the linear velocity of 3–11 m/s, a carrier to noise ratio (C/N) more than 46 dB and an erasability less than −35 dB could be obtained. This high erasability was found to be due to the melt-erasing process. This disk presents highly erasable overwriting and long data retention time supported by an activation energy of 2.3 eV and a temperature of 230 °C for crystallization of the amorphized part.