Low-loss optical waveguides made with molecular beam epitaxial In0.012Ga0.988As and In0.2Ga0.8As-GaAs superlattices

Abstract

We demonstrate for the first time low-loss optical guiding in In-doped GaAs. Ridge waveguides are made with single In0.012Ga0.988As ternary layers and In0.2Ga0.8As-GaAs superlattices. Attenuation constants of ∼1.3 dB/cm are measured and the principal loss mechanism is identified to be scattering at the ridge walls. It is expected that improved fabrication techniques will lead to guides with attenuation ≤0.5 dB/cm.