Bound magnetic polaron in magnetic semiconductors

Abstract

Abstract The bound magnetic polaron (BMP) model is studied for a ferromagnetic non‐degenerate semiconductor. Using Zubarev's Green's function technique a set of coupled equations for the nonuniform spin polarization around an impurity is obtained and the binding energy of a shallow impurity state. A variational solution of these equations indicates that near the magnetic transition temperature the binding energy increases and the orbit of the bound electron shrinks. The application of a magnetic field decreases the binding energy and increases the electron orbit. The calculated temperature and magnetic field dependences of the resistivity are compared with the measured values for a EuSe sample.