Near-UV laser ablation of doped polymers

Juergen Ihlemann, Matthias Bolle, K. Luther, J. Troe

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1991 · 12 citations · 0 references

Concepts

Abstract

Near UV excimer ablation of transparent polymers can be improved or even enabled by doping using organic dyes. Polymethylmethacrylate (PMMA) and polystyrene (PS) have been investigated using both photostable and photoreactive dopants. The best results with regard to etch quality and effectivity have been achieved with 1,3- diphenyltriazene, which supports the ablation process by photoeliminating nitrogen. Etch rates of 50 jim/pulse can be reached at 308 nm and 351 nra. The etch rate does not depend entirely on the low level absorption coefficient of the doped polymer.