<i>P-N</i> Junction Formation during Molecular-Beam Epitaxy of Ge-Doped GaAs

Abstract

Germanium was used to dope both the n and p layers of GaAs grown when molecular beams containing Ge, Ga, and As2 simultaneously impinged on the substrate surface. The formation of n- or p-type layers is dependent on the ratio of As2/Ga in the molecular beam and the substrate temperature. We describe the process used for the doping as well as the photoluminescence spectra from these layers.