Cosmic-Ray-Induced Errors in MOS Devices

Abstract

The results are reported for a comprehensive analytical and experimental study of galactic cosmic-ray-induced errors in MOS devices. An error rate model is described which utilizes exact expressions for a path-length distribution function and a Linear Energy Transfer (LET) spectrum for the cosmic ray environment to calculate the expected cosmic-ray-induced error rate in space for a given parallel-piped-shaped sensitive volume. The model validity is confirmed by comparison of predictions to bit-error data from devices in orbiting satellites, and to cosmic ray simulation measurements on the same device types at a cyclotron. The experimental results and model predictions are described for a wide variety of device types, including NMOS, PMOS, CMOS/bulk, CMOS/SOS, and ANOS.