Field-effect transistor based on /spl beta/-SiC nanowire

Abstract

/spl beta/-SiC nanowires were synthesized by the way of high-frequency induction with diameter range between 10 to 25 nm and the length was up to 10 μm. Field-effect transistor was fabricated with those synthesized /spl beta/-SiC nanowires. The carrier mobilities of the n-type SiCFETs were 6.4 and 15.9 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V/spl middot/s when V/sub ds/ is 0.01 and 0.05 V at room temperature, respectively. At high temperature, the drain current increased by one order of magnitude than it did at room temperature. The carrier mobility versus 1000/T agreed well with the Arrhenius function. The SiCFETs Would be used as electrical devices operated in high temperatures because of their superior properties.