3 kV 600 A 4H-SiC high temperature diode module - Concepedia

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3 kV 600 A 4H-SiC high temperature diode module

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Citations

0

References

2003

Year

Y. Sugawara, Daisuke Takayama, K. Asano, Ranbir Singh, Hironori Kodama, Syuji Ogata, Toshihiko Hayashi

Unknown Venue

Electrical EngineeringDiode ModuleEngineeringKv 600Power DevicePower Semiconductor DevicePower ElectronicsMicroelectronicsHigh TemperatureCarbidePower Electronic Devices

Abstract

A 3 kV 600 A 4H-SiC high temperature diode module has been developed for use in electricity supply applications, which utilizes a pressure contact flat package type module and includes five 6 mm/spl times/6 mm SiC diode chips. The diode module does not get oxidized in the air even at 500/spl deg/C and has excellent electrical performances at high temperature.