Publication | Closed Access
The impact of atomic layer deposited SiO<sub>2</sub>passivation for high-k Ta<sub>1−x</sub>Zr<sub>x</sub>O on the InP substrate
17
Citations
45
References
2015
Year
Materials ScienceSemiconductor TechnologySemiconductor DeviceInp SubstrateEngineeringOxide ElectronicsSurface ScienceApplied PhysicsOxide SemiconductorsSemiconductor MaterialSemiconductor Device FabricationThin FilmsEpitaxial GrowthAtomic LayerIndium Phosphide
Metal–oxide-semiconductor (MOS) capacitors with an amorphous Ta<sub>1−x</sub>Zr<sub>x</sub>O composite gate dielectric film and a SiO<sub>2</sub>passivation layer were fabricated on an indium phosphide (InP) substrate.
| Year | Citations | |
|---|---|---|
Page 1
Page 1