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Advanced ECL with new active pull-down emitter-followers
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2003
Year
Unknown Venue
Accelerator TechnologyElectrical EngineeringSemiconductor DeviceEngineeringHigh-speed ElectronicsEmitter Coupled LogicElectronic EngineeringHigh-load Driving CapabilityComputer EngineeringAdvanced EclMicroelectronicsBipolar Logic GatesElectromagnetic CompatibilityElectronic Circuit
Approaches to high-speed and high-load driving capability of bipolar logic gates are discussed. Several circuits are investigated. It is shown that the Emitter Coupled Logic (ECL) with FET pull-down emitter-followers has a 3-5 times greater capability of driving capacitive loads than the conventional one. The performance improvement is drastically enhanced when applied to GaAs LSIs.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>