Effects of Positive and Negative Stresses on III–V MOSFETs With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

Abstract

We subjected III-V InGaAs MOSFETs to positive and negative gate stresses. The stress polarity strongly affects the degradation kinetics of the gate current. Positive stress features a remarkable increase of the gate current, a net negative trapped charge, a large telegraphic noise, and soft breakdown, before the occurrence of the final catastrophic breakdown. Negative stress features only positive trapped charge until the hard breakdown.