Observation of Dirac cone band dispersions in FeSe thin films by photoemission spectroscopy

Abstract

The search for novel materials with Dirac cone band dispersion is one of the most challenging and important works for both fundamental physics and technological applications. Here, we studied the electronic structure of FeSe thin films grown on $\mathrm{SrTi}{\mathrm{O}}_{3}$ substrates by angle-resolved photoemission spectroscopy (ARPES). We revealed the existence of Dirac cone band dispersions in FeSe thin films thicker than 1 unit cell below the nematic transition temperature, whose apexes are located \ensuremath{-}10 meV below Fermi energy. The evolution of electronic structures for FeSe thin films as a function of temperature, thickness, and cobalt doping were systematically studied. The Dirac cones coexist with the nematicity in FeSe and disappear when nematicity is suppressed. Our results provide useful guidelines for understanding the novel electronic structure, nematicity, and superconductivity in the FeSe system.