High performance D-band (118 GHz) monolithic low noise amplifier

Abstract

This paper presents the results of 118 GHz amplifier designs with state of art low noise performance using 0.1-/spl mu/m pseudomorphic InGaAs/InAlAs/InP HEMT technology. A single ended fixtured 118 GHz LNA demonstrated 3.8-4.5 dB NF with an associated gain of greater than 14.5 dB from 112.5 to 119.5 GHz. A on-wafer balanced LNA with gain of 12 dB, return loss of 9 dB from 110 to 130 GHz was also demonstrated.