Highly integrated power modules based on copper thick-film-on-DCB for high frequency operation of SiC semiconductors — Design and manufacture

Abstract

This paper encompasses the design and the manufacture of a full-SiC module based on copper thick-film. Both DC-link capacitors as well as gate drives are implemented onto the substrate in order to minimise parasitic inductances. Thus, the module is especially suitable for high-frequency operation such as inductive energy transfer and inverter systems for renewable energies and electrical vehicles. In order to maintain high mechanical strength of the module's substrate, a Direct Copper Bond (DCB) provides the basis for multiple thick-film layers. The used thick-film dielectric insulates the gate-drive islands and also works as solder-stop material. The heat-spreading capabilities of DCB substrates are investigated by simulations.