Hydrogenated boron arsenide nanosheet: A promising candidate for bipolar magnetic semiconductor

Abstract

Efficient control and manipulation of spin degrees of freedom without a magnetic field is one of the challenges in developing spintronic devices. Here, we propose a new class of bipolar magnetic semiconductor (BMS) from semihydrogenated BAs nanosheets operated at a Curie temperature of 307 K. Both electron and hole self-doping on the structure with semihydrogenated As atoms induce the transition from ferromagnetic semiconductor to half-metal. The BMS nature is robust under the effect of strain or even a strong electric field. These findings highlight a promising new way toward electrical manipulation of the carrier's spin orientation in two-dimensional materials.