Electronic structure, charge distribution, and charge transfer in α- and β-Si ₃ N ₄ and at the Si(111)/Si ₃ N ₄ (001) interface

Abstract

The electronic structure, charge distribution, and charge transfer in α- and β- Si3N4 and at the Si(111)/Si3N4(001) interface have been studied using a self-consistent first-principles LCAO method. The calculated charge transfer suggests that both in α- and β-phases, the ionic formula may be written as Si3+1.24N4−0.93. For the Si(111)/Si3N4(001) interface, the silicon atoms from the Si(111) side give some electrons to the N atoms of Si3N4 forming the Si-N bonds at the interface. One Si-N bond is associated with a charge transfer of about 0.31 electrons.