EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave Semiconductor DevicesMillimeter-wave CommunicationsRadio-frequency Integrated CircuitsBandwidthHigh-frequency ElectronicsInsertion LossMicrowave SwitchesRadio-frequency DevicesRf SwitchesSwitching DevicesSwitching Performance
A monolithic V-band GaAs FET transmit-receive switch is described. The insertion loss for the switch-on path is less than 1.5 dB across a 2-GHz bandwidth (59 to 61 GHz) and is less than 3.2 dB across an 8-GHz bandwidth (56 to 64 GHz). The isolation during switch-off is greater than 25 dB across a 2-GHz bandwidth (59 to 61 GHz) and is greater than 23 dB across an 8-GHz bandwidth (56 to 64 GHz). The monolithic FET switch circuit demonstrated a switching speed of less than 1 ns and radio-frequency power handling capability in excess of 450 mW.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Microwave switching with GaAs FETs
Y. Ayasli · Microwave journal · 1982 · 92 citations