RF-MEMS switches: paradigms of microwave switching

Abstract

This paper reviews the most recent development of RF-MEMS switches in microwave and mm-wave frequencies up to 110 GHz W-band frequencies. RF-MEMS switches are categorised in different configurations such as cantilever, air-bridge and diaphragm with series and shunt configurations and resistive and capacitive contacts. The excellent performances in terms of very low insertion loss, high isolation and very low dc power consumption make the switches very promising candidates for future wireless communications systems. The remarkable achievement is only 0.4 dB insertion loss and isolation >20 dB at 90 GHz band.