Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

Abstract

We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37-39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be -7.5 mV/C, 0.040 mA/cm 2 /C, and -0.09%/C, respectively.