Thermal channel noise of quarter and sub-quarter micron NMOSFET's

Abstract

We present a simple and efficient method for the extraction of thermal channel noise of MOSFET's in quarter and sub-quarter micron technologies from NF50 (noise figure at 50 ohm source resistance) measurements. For shorter channel lengths the experimental results shows a continuously rising deviation from the classical long channel theory. For a 0.18 /spl mu/m technology a /spl phi//spl ap/6 instead of 2/3 in saturation was extracted (increase of factor 9 compared to the long channel theory).