Hole trapping effect on methodology for DC and AC negative bias temperature instability measurements in PMOS transistors

Abstract

This works presents a thorough study of adequate methodology to be used in order to characterize the NBTI degradation by taking into account the transient effects. The hole trapping/detrapping effect on previously existent traps is the dominant origin of the transient effect and not the interface traps passivation by hydrogen atoms diffusing back to the interface.