Design and Experimental Study of 4H-SiC Trenched Junction Barrier Schottky Diodes

Abstract

This paper presents the design, fabrication, and experimental analysis of 1200 V 4H-SiC trenched junction barrier Schottky (TJBS) diodes. Design considerations and device performances of the TJBS devices are compared with those of the conventional planar JBS diodes via numerical simulation, analytical modeling, and experiments. It was found that, for conventional planar JBS diodes, due to its limited P <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> implantation depth, there is a tight tradeoff between forward ON-resistance and blocking voltage. This does not only put stringent requirement on obtaining a narrow photolithography line width ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">\(\sim 1.5\) </tex-math></inline-formula> <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">\(\mu \) </tex-math></inline-formula> m), but also makes the device design window narrow. The TJBS diodes can substantially alleviate such tradeoff and obtain a larger design window that enables good reverse blocking and forward conduction capabilities at the same time. As a result, this structure demands less restriction on line width control (2.2–3.2 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">\(\mu \) </tex-math></inline-formula> m) of the fabrication process and hence can improve the device yield.