InP 2D photonic crystal microlasers on siliconwafer:room temperature operation at 1.55 µm

Abstract

Room temperature pulsed laser operation of 2D photonic crystal microcavities around 1.55 µm is reported. Such devices are based on thin III/V heterostructures transferred onto silicon and include an InGaAs/InP multiquantum well (MQW) active layer.