Publication | Open Access
Configurable Resistive Switching between Memory and Threshold Characteristics for Protein‐Based Devices
202
Citations
71
References
2015
Year
Non-volatile MemoryEngineeringSmart PolymerEmerging Memory TechnologyMolecular BiologyBiomedical EngineeringPhase Change MemoryElectronic DevicesProtein‐based DevicesSilk ProteinMemory DevicesBiophysicsBiomimetic PolymerMaterials ScienceThreshold CharacteristicsNatural BiomaterialsBiofunctional MaterialFlexible ElectronicsBioelectronicsSemiconductor MemoryRandom AccessResistive Random-access Memory
Natural biomaterials are increasingly used as building blocks for biocompatible and green electronics. The study demonstrates silk‑protein resistive switching devices with configurable functionality and seeks to guide performance optimization and mechanistic insight. The devices’ resistive switching type is precisely controlled by the compliance current, enabling memory RS at higher currents and threshold RS at lower currents, and allowing random‑access or WORM memory modes. Silk protein demonstrates configurable resistive switching, indicating its potential for sustainable electronics and data storage.
The employ of natural biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and green electronics. Here, resistive switching (RS) devices based on naturally silk protein with configurable functionality are demonstrated. The RS type of the devices can be effectively and exactly controlled by controlling the compliance current in the set process. Memory RS can be triggered by a higher compliance current, while threshold RS can be triggered by a lower compliance current. Furthermore, two types of memory devices, working in random access and WORM modes, can be achieved with the RS effect. The results suggest that silk protein possesses the potential for sustainable electronics and data storage. In addition, this finding would provide important guidelines for the performance optimization of biomaterials based memory devices and the study of the underlying mechanism behind the RS effect arising from biomaterials.
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