Steep-Slope Metal–Insulator-Transition VO₂Switches With Temperature-Stable High $I_{\mathrm{{\scriptscriptstyle ON}}}$

Abstract

This letter reports a detailed experimental investigation of the slope of the current switching between OFF and ON states exploiting the metal-insulator-transition (MIT) in vanadium dioxide devices. The reported devices are CMOS compatible two-terminal switches. We experimentally demonstrate for the first time the very little dependence on temperature of the steep slope of these switches, ranging from 0.24 mV/decade at room temperature, to 0.38 mV/decade at 50 °C. The fabricated devices show excellent ON-state conduction, with I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> > 1.8 mA/μm or R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> <; 3 mΩ/μm, for the whole range of investigated temperatures (from room temperature to the MIT transition temperature), which recommends them as future candidates for steep-slope, highly conductive, and temperature-stable switches.