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EFFECT OF ARSENIC PRESSURE ON HEAT TREATMENT OF LIQUID EPITAXIAL GaAs
82
Citations
8
References
1970
Year
Materials EngineeringSemiconductorsElectrical EngineeringWide-bandgap SemiconductorEngineeringIi-vi SemiconductorPhysicsEpitaxial GrowthH2 FlowP-type Gaas CrystalsApplied PhysicsSemiconductor MaterialHeat TransferMolecular Beam EpitaxyMicroelectronicsAs VaporOptoelectronicsCompound Semiconductor
Short-time heat treatments in a H2 flow, and under an As vapor, have been performed on n-type and p-type GaAs crystals. Acceptors are created at the surface and proceed to the interior. The changes in carrier concentration as function of As vapor pressure showed the acceptors to be associated with As vacancies.
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