Cyclic PECVD of Ge[sub 2]Sb[sub 2]Te[sub 5] Films Using Metallorganic Sources

Abstract

(GST) thin films were deposited on and substrates by cyclic metallorganic chemical vapor deposition using , , as Ge, Sb, and Te precursors, respectively, with the help of plasma at temperatures ranging from 180 to . The application of plasma power was essential in obtaining a high growth rate and stoichiometric GST thin films. The chemical composition of the films was properly controlled by the cycling ratio and sequence of each precursor pulse. The stoichiometric films grown at showed a smooth surface morphology, highest density, and lowest impurity concentration. GST film was selectively grown inside the contact hole having a plug.