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Resistive switching in Ga- and Sb-doped ZnO single nanowire devices

31

Citations

37

References

2015

Year

Abstract

Self-rectifying resistive switching is demonstrated in Ga-doped ZnO single nanowire device. The current is not only self-rectifying but also self-compliance for Sb-doped single nanowire devices in which multilevel resistive switching has also been achieved by using different SET voltages.

References

YearCitations

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