Direct numerical simulation of the large-signal RF behavior of power transistors

Abstract

Commercial device simulation software can now be used to perform direct numerical simulation of the large-signal behavior of RF power transistors. However, the methodologies that exploit this capability are still at a very early stage of development. In this paper the relevant capabilities of commercial software are summarized, and techniques and procedures for exploiting these capabilities are described. Two non-trivial application examples are then presented. The first is a simulation of the effect of load impedance on the characteristics of a GaAs MESFET class AB power amplifier used for wireless applications at 1.8 GHz. The second is a simulation of the impact of base implant dose on the composite triple beat (CTB) performance of a NPN BJT used for CATV applications.