High-performance, hysteresis-free carbon nanotube field-effect transistors via directed assembly

Abstract

High-performance, single-wall carbon nanotube field-effect transistors (SWCNT-FETs) are fabricated using directed assembly and mass-produced carbon nanotubes (CNTs). These FETs exhibit operating characteristics comparable to state-of-the-art devices, and the process provides a route to large-scale functional CNT circuit assembly that circumvents problems inherent in processes relying on chemical vapor deposition. Furthermore, the integration of hydrophobic self-assembled monolayers in the device structure eliminates the primary source of gating hysteresis in SWCNT-FETs; this leads to hysteresis-free FET operation while exposing unmodified nanotube surfaces to ambient air.