Evolution of thin-film and surface microstructure

Abstract

This volume is organized roughly according to the topics of the individual sessions themselves. The first part deals with nucleation and orientation relationships during epitaxy and thin film growth. The second and third parts deal with coarsening, agglomeration and other microstructural phenomena in thin films. The fourth part deals with new and novel diagnostics during epitaxy, and is published jointly with the proceedings of the Symposium on Advances in Surface and Thin Film Diffraction. The fifth and sixth parts deal with semiconductor and nonsemiconductor surface phenomena, respectively. The seventh part deals with strain and misfit accommodation in epitaxy. Finally, the eighth and ninth parts deal with crystallization and other interface-mediated solid-phase reactions.