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InP microdisk lasers on silicon wafer: CW roomtemperature operation at 1.6 µm

DOI

49

Citations

3

References

2001

Year

Christian Seassal, P. Rojo-Roméo, Xavier Letartre, Pierre Viktorovitch, G. Hollinger, E. Jalaguier, S. Pocas, B. Aspar
Electronics Letters

Abstract

Microdisk lasers are fabricated in an InP/InGaAs MQW heterostructure transferred onto silicon. The CW room temperature laser operation of such devices at 1.6 µm is reported.

References

YearCitations

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