High Resolution Electron Microscopy of Images of Atoms in Silicon Crystal Oriented in (110)

Abstract

Images of atoms in silicon crystal projected onto the (110) plane were observed by high resolution electron microscopy. Changes of the crystal structure images of silicon with the variation of imaging conditions such as the amount of defocus and the crystal thickness were examined. The optimum conditions for the formation of the nearly ideal image were examined in the case of 100 kV electron microscope with a spherical aberration coefficient of 0.7 mm of the objective lens on the basis of calculations of image contrasts using the n-slice theory.