High performance of diamond p+-i-n+ junction diode fabricated using heavily doped p+ and n+ layers

Abstract

A good ideality factor and rectification ratio were obtained in a p+-i-n+ diamond diode with p+ and n+ doping levels of ∼1020 cm−3, where the hopping conduction mechanism dominates in the bulk p+ and n+ layers. The diode characteristics show a rectification ratio of 108 at ±10 V and an ideality factor of n=1.32. This diode showed ruggedness with a large current density of over 15 000 A/cm2 at +35 V. These results indicate the possibility of large-current devices.