Thermally stimulated current in high resistivity Cd0.85Mn0.15Te doped with indium

Abstract

Charge carrier traps in Cd0.85Mn0.15Te doped with indium were studied using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 100to300K. Four peaks in the current spectrum were identified. From the initial rise method and the best fit of the spectrum to the theoretical model, the activation energies and the relaxation parameters for the corresponding traps were determined.