AIP conference proceedings · 1984 · 45 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsDefect ThermodynamicsDefects In Electronic MaterialsSemiconductor DefectsSemiconductor PhysicsThermal Properties Of MaterialsThermal Properties Of SemiconductorsCarrier GenerationCompositionDeep-level DefectsDefect CentersDefect Thermodynamics Of SemiconductorsPhotodetectionTemperature Dependence Of Defect PopulationsThermally Activated Defects
The mechanism of isothermal bulk carrier generation in the dark and the sensitizing effects of prior penetrating illumination and thermal history have been investigated in a composition series of a‐Se:Te alloy films using xerographic techniques. In all cases, thermal generation is characterized by the simultaneous production of free holes and deeply trapped negative space charge. Results suggest that dark carrier generation is controlled by deep native (thermodynamic) defect centers whose population at a given temperature below Tg can be temporarily altered by photo and/or thermal excitation.