V-band monolithic power MESFET amplifiers

Abstract

Monolithic GaAs power amplifiers developed for V-band applications are described. A single-stage amplifier provided >4-dB gain from 50 to 56 GHz, with output power of 95 mW and a power-added efficiency of 11% at 55 GHz. A cascaded amplifier achieved 16.2-dB gain and output power of 85 mW. An optimized device structure together with computer-aided design (CAD) programs resulted in the use of MESFETs with larger gate width than those previously reported, achieving the high-output-power monolithic circuits from the initial design. Built-in, DC-blocking capacitors and bias networks allowed the cascading of these MMICs, providing usable power gain with stable operation.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>