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Photovoltaic response and dielectric properties of epitaxial anatase-TiO2 films grown on conductive La0.5Sr0.5CoO3 electrodes
44
Citations
15
References
2001
Year
Materials ScienceMaterials EngineeringElectrical EngineeringDielectric PropertiesEngineeringFerroelectric ApplicationEpitaxial Anatase-tio2Oxide ElectronicsApplied PhysicsEpitaxial Anatase-tio2 FilmsPhotovoltaic ResponsePhoto-electrochemical CellBottom ElectrodesThin FilmsEpitaxial GrowthPhotovoltaicsKelvin ProbeThin Film Processing
We have grown epitaxial anatase-TiO2 (001) films on La0.5Sr0.5CoO3 (001) bottom electrodes using pulsed-laser deposition. The small lattice mismatch (0.5%) between the anatase-TiO2 and the La0.5Sr0.5CoO3 makes it possible to grow anatase-TiO2 films with excellent crystallinity on conductive metal oxides. The photovoltaic properties of the epitaxial anatase-TiO2 on the La0.5Sr0.5CoO3 were characterized using a Kelvin probe. The optical band-gap energy was found to be 3.05 eV. The dielectric properties of the epitaxial anatase-TiO2 films were characterized using a capacitor structure of Au/anatase-TiO2/La0.5Sr0.5CoO3 on a LaAlO3 substrate. The dielectric dispersion exhibited a power-law dependence, and the dielectric constant measured at room temperature and 1 MHz was 38.
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