Applied Physics Letters · 2008 · 35 citations · 22 references
Semiconductor TechnologyElectrical EngineeringEngineeringElectronic MaterialsPhysicsOrganic ElectronicsNanotechnologyNanoelectronicsOxide ElectronicsApplied PhysicsSemiconductor NanostructuresOrganic SemiconductorDavid B. JanesMicroelectronicsOrganic Gate NanodielectricsJune 2008Semiconductor DeviceNanophysics
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Sanghyun Ju, Fumiaki Ishikawa, Pochiang Chen, Hsiao-Kang Chang, Chongwu Zhou, Young-geun Ha, Jun Liu, Antonio Facchetti, Tobin J. Marks, David B. Janes; High performance In2O3 nanowire transistors using organic gate nanodielectrics. Appl. Phys. Lett. 2 June 2008; 92 (22): 222105. https://doi.org/10.1063/1.2937111 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search
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