Applied Physics Letters · 2006 · 11 citations · 10 references
Electrical EngineeringEngineeringLow-current-induced Electrical HysteresisStrong Co StateOxide ElectronicsElectronic MemoryTwo-domain StructureApplied PhysicsBias Temperature InstabilitySemiconductor MemoryHysteresisNd0.7ca0.3mno3 Sample ChangeMicroelectronicsPhase Change MemorySemiconductor Device
The electrical characteristics of Nd0.7Ca0.3MnO3 were investigated by measuring voltage versus current (V-I) at various temperatures. The V-I curves of the Nd0.7Ca0.3MnO3 sample change from linear to nonlinear behavior at temperatures below the charge ordering (CO) temperature (TCO∼200K). An unexpected and reproducible electrical hysteresis loop is observed in the linear region below the Curie temperature (TC∼110K); it is associated with the “tearing” of a two-domain structure of weak and strong CO state. The required current for this hysteresis is of the order of microamperes, which is appropriate for the low-current memory devices.
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