Applied Physics Letters · 2006 · 100 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsCapacitanceCharge TrappingEquivalent Oxide ThicknessGate Dielectric EngineeringGate LeakageGate Oxide LeakageGate OxidesMolecular Beam Epitaxy
The authors demonstrate that the compound SrHfO3 grown epitaxially on Si(100) by molecular-beam epitaxy is a potential gate dielectric to fabricate n- and p-metal-oxide semiconductor field-effect transistors with equivalent oxide thickness (EOT) below 1nm. The electrical properties on capacitors and transistors show low gate leakage and good capacitance and I-V output characteristics. The lower electron and hole mobilities, which are strongly limited by charge trapping, nevertheless fit well with the general trend of channel mobility reduction with decreasing EOT.
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The interface between silicon and a high-k oxide
Clemens J. Först, C. Ashman, Karlheinz Schwarz et al. · Nature · 2003 · 306 citations · Full text
Field effect transistors with SrTiO3 gate dielectric on Si
K. Eisenbeiser, J. Finder, Zhiping Yu et al. · Applied Physics Letters · 2000 · 296 citations