A comparison of electron, proton and helium ion irradiation for the optimization of the CoolMOS/spl trade/ body diode

Abstract

With a view to improving the switching speed of the internal diode, we exposed CoolMOS/spl trade/ power MOSFETs as prominent representatives of the new class of charge compensation devices to irradiation by electrons, protons or helium ions for lifetime control and studied the influence of irradiation and annealing parameters on the electrical device characteristics. Our investigations show that electron irradiation provides the best overall result. The reverse recovery charge Q/sub rr/ can be reduced by a factor of 10 compared to reference devices without any significant change of the remaining electrical data of the device.