High-oxygen-pressure crystal growth of ferroelectric Bi4Ti3O12 single crystals

Abstract

We have investigated the effects of high-oxygen-pressure crystal growth of ferroelectric Bi4Ti3O12 on the polarization properties along the a(b) axis. Domain observations by piezoresponse force microscope demonstrate that a small remanent polarization (Pr) for the crystals grown at 0.02MPa is attributed to the clamping of 90° domain walls by oxygen vacancies. The vacancy formation of Bi and O during crystal growth at high temperatures is suppressed at a higher oxygen pressure, leading to a larger Pr of 47μC∕cm2 for the crystals grown at 1MPa oxygen. High-oxygen-pressure sintering is proposed to be effective for obtaining Bi4Ti3O12-based devices with enhanced polarization properties.